PART |
Description |
Maker |
2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device Toshiba Semiconductor
|
2SC4637LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications 1800V/15mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
2SC4631LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications 900V/300mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications 1500V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications 1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
2SC3646 |
High-Voltage Switching Applications Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC3645 |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS.
|
TOSHIBA
|